Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics

HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due their accumulative switching behavior, which limits application in large scale memory arrays. Here we show that with a thin SiNx interfacial layer immune pulsed under both ${V}_{\textit {dd}}$ /2 /3 inhibit schemes, but not continuous disturb. This contrasts previous reports found no difference between disturbs. Our findings suggest polarization is an intrinsic property of FeFETs, might related charge trapping dynamics instead.